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Combo

COMBO PON ONU

Item No.: 00196
The BOSA is used for Combo PON ONU (GPON+XGS PON ONU).
The transmitter of this product integrates two high-speed DFB laser diodes with a wavelength of 1310nm and a working rate of 1.25Gb/s and a high-speed DFB laser diode with a wavelength of 1270nm and
Description
Description

Descriptions

- The transmitter of this product integrates two high-speed DFB laser diodes with a wavelength of 1310nm and a working rate of 1.25Gb/s and a high-speed DFB laser diode with a wavelength of 1270nm and a working rate of 10Gb/s.
-The BOSA is used for Combo PON ONU (GPON+XGS PON ONU).
- The transmitting end adopts DFB laser, and the receiving end adopts APD-TIA diode.
- Chip information:                          
                         LD: 1310nm 1.25G/s DFB and 1270nm 10G/s EML                            
                         PT: 2.5G APD-TIA and 10G APD-TIA


Features 

- 1310nm 1.25G Transmitter with DFB laser diode
- 1270nm 10G Transmitter with DFB laser diode
- 1490nm 2.5G Receiver with APD TIA
- 1577nm 10G Receiver with APD TIA
- High output power
- Support SC/APC or SC/UPC Pigtail
- Support Industrial temperature (-40~85C)
- ROHS Compliant Products Available


Application

The BOSA is used for Combo PON ONU (GPON+XGS PON ONU)

Standard

- Comply with Telcordia GR-468 reliability test standard
- Comply with 6 RoHS standards
- Comply with ROHS (Restriction of Hazardous Substances) standard
- Comply with GR-326 connector qualification standard

 

I. Main  Optical - Electric and environmental parameters: 
    
i.  Absolute Maximum Ratings(Tc=25℃ , unless otherwise noted)
Parameter Symb Min. Max. Unit
Storage Temperature Tstg -40 85
Operating Case Temperature Top -40 85
APD Damage Power --- --- -3 dBm
Hand Lead Soldering (Temperature)/(Time) --- --- 260/10 ℃/Sec
 

II.Transmitter Optical And Electrical Characteristics
(Unless specified else, the specifications below are defined at TC=25±3℃ )
Parameter Symbol Min. Typ. Max. Unit Note
10G Trasmitter
Transmitter Signal Rate --- --- 9.95G --- Gbps ---
 
Threshold Current
 
Ith
--- 9 15 mA 25°C
--- --- 42 mA  
LD ForwardVoltage Vf --- --- 1.8 V CW, Iop=Ith+20mA
Centerwavelength λc 1260 1270 1280 nm Iop=Ith+20mA
SideMode
SuppressionRatio
SMSR 30 --- --- dB Iop=Ith+20mA
Output Power P0 2.6 --- --- mW 25℃ , Iop=Ith+20mA
Slope Efficiency SE 0.14 --- --- mW/mA 25℃, Iop=Ith+20mA
Monitor Current Imon 100 --- 1000 uA Iop=Ith+20mA
Monitor Dark Current Id --- --- 100 nA Vr=1V
 
Tracking Error
 
TE
 
-1.5
 
---
 
1.5
 
dB
10log(Pf@Tc)/Pf@2
5°C)),CW,
Imon=constant@25°C,
 
1.25G Trasmitter
Center Wavelength λ 1290 1310 1330 nm Iop=Ith+20mA
Transmitter Bit Rate --- --- 1.244 --- Gbps  
 
Threshold Current
 
Ith
--- 9 15 mA 25°C
--- --- 45 mA  
Output Power Po 1.4     mW Iop=Ith+20mA, 25℃
Slope efficiency SE 0.07     mW/mA CW, Iop=Ith+20mA, 25℃
Side Mode Suppression SMSR 30 --- --- dB Iop=Ith+20mA
Spectral Width((-20dB) Δλ --- 0.2 1.0 nm Iop=Ith+20mA
Monitor Current (PD) Im 100 --- 1000 uA CW, If=Ith+20mA
LD Forward Voltage Vf --- --- 1.8 V CW, If=Ith+20mA
Monitor Dark Current Id --- --- 100 nA Vr=1V
 
Tracking Error
 
TE
 
-1.5
 
---
 
1.5
 
dB
If=Ith+20mA,  


III、 Receiver Optical and Electrical Characteristics
(Unless specified else, the specifications below are defined at TC=25±3℃ )
Parameter Symbol Min. Typ. Max. Unit Condition
10G Receiver
Operating Wavelength λ 1575 1577 1580 nm  
Rx Rate --- --- 9.95 --- Gbps  
Sensitivity Sen --- --- -30.5 dBm  
9.95G, PRBS 231-1,  BER10-3, ER=6dB,
Vop=Vbr-3V BOL
Saturation Power PSA -7 --- --- dBm
Break Down Voltage Vbr 25 33 47 V Id=10uA With Vcc on
TIA SupplyVoltage Vcc 3.0 3.3 3.6 V  
SupplyCurrent Icc 25 34 45 mA  
Dark Current Id --- --- 100 nA Vop=Vbr-3,TC=25℃
2.5G Receiver
Operating Wavelength λ 1480 1490 1500 nm  
Rx Rate --- --- 2.488 --- Gbps  
Sensitivity Sen --- --- -31 dBm 2.488Gb/s,λ=1490nm
ER=8dB, BER=10-10         PRBS=2 23-1,VR=Vbr-3
Saturation Power PSA -7 --- --- dBm
Break Down Voltage Vbr 32 47 55 V Id=10μA
Dark Current Id --- --- 100 nA Vop=Vbr-3,TC=25℃
TIA SupplyVoltage Vcc 3.0 3.3 3.6 V ---
SupplyCurrent Icc 25 32 40 mA ---
Optical Isolation From         External Source (λ         =12601360nm, 1441   1450nm, 15301539nm)  
ISO1
 
25
 
---
 
---
 
dB
 
Optical Isolation From External Source (λ  =14001440nm,  λ  =15401625nm)  
ISO2
 
35
 
---
 
---
 
dB
 
Rx Optical Return loss, λ=1490nm ORL          
 


Table4 Transmitter Electro-Optical Characteristics (TC=25°C, CW) For XGPON OLT
 

Item Symbol Test Condition Min. Typ. Max. Unit
Laser threshold current ITH TC=25℃   CW --- -- 12 mA
Tc=-10℃~85℃,CW     30
Operating voltage VF Iop,Top --- --- 2 V
Laser average output optical power Pf Tc=45ºC, CW, Iop=80mA@EA=0v 3.5 --- --- mW
Tc=-10℃~85℃, CW,Iop=Ith+20mA 1.8 --- --- mW
Center Wavelength   λC CW, Top 1575 1577 1580 nm
Monitor Current IM CW, Tc=-10℃~85℃ 100 --- 1000 uA
Optical Return Loss tolerance  ORLT λ= 1577nm --- --- -10 dB
The Tracking Error ΔPf/Pf Tc=-10℃~85℃,CW, APC
TE=10log(Pf(TC)/Pf(25℃))
-1.5 --- +1.5 dB
 

Table5 Receiver Electro-Optical Characteristics (TC=25°C, Vcc=3.3V) For XGPON OLT
Item Symbol Test Condition Min. Typ. Max. Unit
Supply Current ICC 依据TO 选型, 范围会不一样 --- --- --- mA
Operation Wavelength λ Tc=-10℃~85℃ 1260 -- 1280 nm
Saturation Power PSAT Tc=-10℃~85℃  AC, RL=50Ω, NRZ, 2.5Gbps, PRBS=2^31-1 Extinctionratio:8.2dB BER=10-4, -7 --- --- dBm
Sensitivity Sen Tc=-10℃~85℃ AC,
RL=50Ω, NRZ, 2.5Gbps,
PRBS=2^31-1 Extinction
ratio:8.2dB BER=10-4,
λ=1260~1280nm
-30 -- -- dBm
Optical Return Loss ORL λ= 1270nm -- --- -20 dB
Optical Crosstalk XTALK 1577nm Internal TX/1270nm RX -- --- -45 dB


IV. Structure
Note:    mm.          tolerance ±0.05mm


 

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